參數(shù)資料
型號: HGTG27N120BN
廠商: INTERSIL CORP
元件分類: IGBT 晶體管
英文描述: 72A, 1200V, NPT Series N-Channel IGBT
中文描述: 72 A, 1200 V, N-CHANNEL IGBT, TO-247
文件頁數(shù): 5/7頁
文件大?。?/td> 82K
代理商: HGTG27N120BN
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
15
30
5
250
25
20
150
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
45
40
35
400
300
350
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
60
55
50
R
G
= 3
, L = 1mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
10
15
30
5
0
100
150
25
20
50
200
250
45
40
35
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
R
G
= 3
, L = 1mH, V
CE
= 960V
60
55
50
I
C
,
0
50
100
150
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
200
250
300
14
15
350
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
250
μ
s PULSE TEST
DUTY CYCLE <0.5%, V
CE
= 20V
V
G
,
Q
G
, GATE CHARGE (nC)
14
4
16
2
6
0
0
250
100
50
300
150
V
CE
= 400V
V
CE
= 800V
I
G(REF)
= 2mA, R
L
= 22.2
, T
C
= 25
o
C
V
CE
= 1200V
8
10
12
200
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
2
C
C
IES
C
OES
4
6
8
10
FREQUENCY = 1MHz
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
10
30
35
0
0.5
1.0
0
1.5
2.0
4.5
5
40
DUTY CYCLE <0.5%, T
C
= 110
o
C
250
μ
s PULSE TEST
25
15
20
2.5
3.0
3.5
4.0
V
GE
= 15V
V
GE
= 10V
HGTG27N120BN
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