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參數(shù)資料
| 型號(hào)： | HGTG18N120BN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CAT6A PVC WHITE F/UTP BULK CABLE |
| 中文描述： | 54 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | HGTG18N120BN |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG18N120BN
1200
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 3) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 3) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
54
26
160
±
20
±
30
A
A
A
V
V
100A at 1200V
390
3.12
125
-55 to 150
260
8
15
W
W/
o
C
mJ
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 25A, L = 400
μ
H, T
J
= 25
o
C.
3. V
CE(PK)
= 960V, T
J
= 125
o
C, R
G
= 3
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
250
μ
A
-
250
-
μ
A
-
-
3
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 18A,
V
GE
= 15V
-
2.45
2.7
V
-
3.8
4.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 150
μ
A, V
CE
= V
GE
6.0
7.0
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 3
,
V
GE
= 15V,
L = 200
μ
H, V
CE(PK)
= 1200V
-
-
±
250
nA
Switching SOA
SSOA
100
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 18A, V
CE
= 0.5 BV
CES
-
10.5
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 18A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
165
200
nC
V
GE
= 20V
-
220
250
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 18A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3
L = 1mH
Test Circuit (Figure 18)
-
23
28
ns
Current Rise Time
t
rI
-
17
22
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
170
200
ns
Current Fall Time
t
fI
-
90
140
ns
Turn-On Energy (Note 5)
E
ON1
-
0.8
1.0
mJ
Turn-On Energy (Note 5)
E
ON2
-
1.9
2.4
mJ
Turn-Off Energy (Note 4)
E
OFF
-
1.8
2.2
mJ
HGTG18N120BN
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG18N120BND | 功能描述:IGBT 晶體管 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG18N120BND_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG201N100E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG20N100D2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG20N120 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:34A, 1200V N-Channel IGBT |
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