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參數(shù)資料
| 型號： | HGTG11N120CND |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 11 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 81K |
| 代理商： | HGTG11N120CND |
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 150
o
C, R
G
= 10
, L = 2mH, V
CE
= 960V
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
f
M
,
2
5
10
20
10
50
5
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.42
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
75
o
C
75
o
C
V
GE
15V
12V
110
o
C
12V
15V
110
o
C
200
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
12
13
14
15
16
5
10
15
20
50
100
150
250
t
SC
I
SC
25
200
V
CE
= 840V, R
G
= 10
, T
J
= 125
o
C
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
20
6
8
30
50
250
μ
s PULSE TEST
DUTY CYCLE < 0.5%, V
GE
= 12V
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
40
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
30
40
0
2
4
6
8
10
50
0
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
250
μ
s PULSE TEST
E
O
,
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
3
2
5
0
5
10
0
15
20
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 10
, L = 2mH, V
CE
= 960V
1
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
2.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
5
0
0.5
1.5
1.0
2.0
3.0
3.5
10
R
G
= 10
, L = 2mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
15
20
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
相關(guān)PDF資料 |
PDF描述 |
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| HGT1S11N120CNS | 43A, 1200V, NPT Series N-Channel IGBT(43A, 1200V NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTG11N120CN | 43A, 1200V, NPT Series N-Channel IGBT |
| HGTG11N120CND | 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP15N50C1 | 15A, 20A, 400V and 500V N-Channel IGBTs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG11N120CND | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT |
| HGTG12N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG12N60A4D | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG12N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG12N60A4S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-247AA |
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