型號(hào): | HGTD7N60B3S9A |
英文描述: | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-252AA |
中文描述: | 晶體管| IGBT的|正陳| 600V的五(巴西)國(guó)際消費(fèi)電子展|第7A一(c)|至252AA |
文件頁(yè)數(shù): | 1/7頁(yè) |
文件大小: | 115K |
代理商: | HGTD7N60B3S9A |
相關(guān)PDF資料 |
PDF描述 |
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HGT1S10N120BNS9A | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB |
HGT1S12N60B3DS9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
HGT1S12N60B3S9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
HGT1S12N60C3DS9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
HGT1S12N60C3DST | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0502-8 30 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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HGTD7N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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HGTD7N60C3S9A | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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HGTD8P50G1S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |