參數(shù)資料
型號(hào): HGTD7N60A4S
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 600V, SMPS Series N-Channel IGBT
中文描述: 34 A, 600 V, N-CHANNEL IGBT, TO-252AA
文件頁數(shù): 4/11頁
文件大?。?/td> 168K
代理商: HGTD7N60A4S
2-4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
5
10
1.5
2.0
3.0
25
20
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
30
T
J
= 25
o
C
0.5
2.5
15
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
J
= 150
o
C
T
J
= 25
o
C
0
5
10
25
20
30
15
0
1.0
1.5
2.0
3.0
0.5
2.5
T
J
= 125
o
C
E
O
,
μ
J
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
200
400
0
4
2
6
8
10
12
14
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 25
, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
100
0
500
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
0
50
200
100
250
350
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
150
R
G
= 25
, L = 1mH, V
CE
= 390V
4
2
6
8
10
12
14
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
8
14
16
T
J
= 125
o
C, V
GE
= 15V
R
G
= 25
, L = 1mH, V
CE
= 390V
12
10
T
J
= 25
o
C, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V
T
J
= 25
o
C, V
GE
= 12V
4
2
6
8
10
12
14
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
20
10
40
30
R
G
= 25
, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
4
2
6
8
10
12
14
0
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4
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