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參數(shù)資料
| 型號： | HGTD3N60B3S9A |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-252AA |
| 中文描述： | 晶體管| IGBT的|正陳| 600V的五（巴西）國際消費電子展| 3.5AI（丙）|至252AA |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 110K |
| 代理商： | HGTD3N60B3S9A |
2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. B
File Number
4825
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S, HGT1S3N60A4S and the
HGTP3N60A4 are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.
This device has been
optimized for high frequency switch mode power
supplies
.
Formerly Developmental Type TA49327.
Symbol
Features
>100kHz Operation at 390V, 3A
200kHz Operation at 390V, 2.5A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
12mJ E
AS
Capability
Low Conduction Loss
Temperature Compensating
SABER Model
www.Fairchild.com
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-252AA
JEDEC TO-263AB
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60A4S
TO-252AA
3N60A4
HGT1S3N60A4S
TO-263AB
3N60A4
HGTP3N60A4
TO-220AB
3N60A4
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA or the TO-263AB in tape and reel, i.e.
HGT1S3N60A4S9A
C
E
G
G
E
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
E
G
C
G
E
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
Data Sheet
January 2000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S3N60A4S9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-263AB |
| HGT1S3N60B3S9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB |
| HGTD7N60A4S9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 34A I(C) | TO-252AA |
| HGTD7N60C3S9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-252AA |
| HGTG12N60A4S | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-247AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD3N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD3N60C3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD3N60C3S9A | 功能描述:IGBT 晶體管 6a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD6N40E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD6N40E1S | 制造商:Harris Corporation 功能描述: |
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