參數(shù)資料
型號(hào)： HGTD2N120CNS
廠商： HARRIS SEMICONDUCTOR
元件分類： IGBT 晶體管
英文描述： 13A, 1200V, NPT Series N-Channel IGBT
中文描述： 2 A, 1200 V, N-CHANNEL IGBT, TO-252AA
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 89K
代理商： HGTD2N120CNS
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTD2N120CNS
HGTP2N120CN,
HGT1S2N120CNS
1200
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 3) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
13
7
20
±
20
±
30
A
A
A
V
V
13A at 1200V
104
0.83
18
-55 to 150
W
W/
o
C
mJ
o
C
300
260
8
o
C
o
C
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 3A, L = 4mH.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 51
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
100
μ
A
-
100
-
μ
A
-
-
1.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 2.6A,
V
GE
= 15V
-
2.05
2.40
V
-
2.75
3.50
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 45
μ
A, V
CE
= V
GE
6.4
6.7
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 51
,
V
GE
= 15V,
L = 5mH, V
CE(PK)
= 1200V
-
-
±
250
nA
Switching SOA
SSOA
13
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 2.6A, V
CE
= 0.5 BV
CES
-
10.2
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 2.6A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
30
36
nC
V
GE
= 20V
-
36
43
nC
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
相關(guān)PDF資料
PDF描述
HGTD2N120CNS 13A, 1200V, NPT Series N-Channel IGBT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTD2N120CNS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-252AA
HGTD3M60C3 制造商:Harris Corporation 功能描述:
HGTD3N60A4 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT
HGTD3N60A4S 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTD3N60A4S9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA
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