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參數(shù)資料
| 型號(hào)： | HGTD1N120BNS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.3A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | HGTD1N120BNS |
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
(Unless Otherwise Specified)
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
0
1.5
2
2.5
3
t
d
,
8
12
20
16
24
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
V
GE
25
o
C
150
o
C
25
o
C
150
o
C
13V
13V
15V
15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
1
4
8
24
20
12
2
0.5
16
1.5
2.5
28
3
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
1
2
64
1.5
56
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
2.5
84
72
76
3
0.5
60
68
80
T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 13V
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
0.5
1
2
160
240
1.5
120
280
360
2.5
3
320
200
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 13V OR 15V
T
J
= 150
o
C, V
GE
= 13V OR 15V
I
C
,
0
2
4
6
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
8
10
12
14
15
14
16
18
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 20V
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
15
3
6
0
0
20
8
4
12
9
12
16
I
G(REF)
= 1mA, R
L
= 600
, T
C
= 25
o
C
V
CE
= 1200V
V
CE
= 800V
V
CE
= 400V
HGTD1N120BNS, HGTP1N120BN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTD1N120CNS | 6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTP1N120BN | 5.3A, 1200V, NPT Series N-Channel IGBT(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTD1N120BNS | 5.3A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120BNS9A | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA |
| HGTG15N120C3D | 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD1N120BNS9A | 功能描述:IGBT 晶體管 5.3a 1200v N-Ch IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD1N120CNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA |
| HGTD2N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGTD2N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
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