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參數(shù)資料
| 型號： | HGTA32N60E2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 100uF; Voltage: 25V; Case Size: 6.3x11 mm; Packaging: Bulk |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, MO-093AA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 31K |
| 代理商： | HGTA32N60E2 |
3-116
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HGTA32N60E2
32A, 600V N-Channel IGBT
Features
32A, 600V
Latch Free Operation
Typical Fall Time 620ns
High Input Impedance
Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
o
C and +150
o
C.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTA32N60E2
TO-218
GA32N60E2
NOTE: When ordering, use the entire part number.
April 1995
Package
JEDEC MO-093AA (5 LEAD TO-218)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
5 EMITTER4 EMITTER KELVIN
3 COLLECTOR
2 NO CONNECTION
1 GATE
COLLECTOR
(FLANGE)
C
G
E
EMITTER
KELVIN
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTA32N60E2
600
600
50
32
200
±
20
±
30
200A at 0.8 BV
CES
208
1.67
-55 to +150
260
3
15
UNITS
V
V
A
A
A
V
V
-
W
W/
o
C
o
C
o
C
μ
s
μ
s
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
at V
GE
= 15V at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . .I
C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Sage Operating Area T
J
= +150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Short Circuit Withstand Time (Note 2)at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junctions temperature.
2. V
CE(PEAK)
= 360V, T
C
= +125
o
C, R
GE
= 25
.
INTERSIL IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2833.3
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