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參數(shù)資料
| 型號： | HGT1S7N60B3S |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBTs(14A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 92K |
| 代理商： | HGT1S7N60B3S |
1
File Number
4412.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49190.
Symbol
Features
14A, 600V, T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
JEDEC TO-252AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD7N60B3S
TO-252AA
G7N60B
HGT1S7N60B3S
TO-263AB
G7N60B3
HGTP7N60B3
TO-220AB
G7N60B3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.,
HGTD7N60B3S9A.
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S7N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB |
| HGT1S7N60C3D | 功能描述:IGBT 晶體管 Optocoupler Phototransistor RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60C3DS | 功能描述:IGBT 晶體管 7A 600V TF=275NS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60C3DS9A | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1Y40N60B3D | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
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