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參數(shù)資料
| 型號(hào)： | HGT1S7N60B3DS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 94K |
| 代理商： | HGT1S7N60B3DS |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode Both at T
J
= 150
o
C
I
CE
= I
C110
, V
CE
= 0.8 BV
CES
,
V
GE
= 15V, R
G
= 50
, L = 2mH,
Test Circuit (Figure 19)
-
24
-
ns
Current Rise Time
t
rI
-
22
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
230
295
ns
Current Fall Time
t
fI
-
120
175
ns
Turn-On Energy
E
ON
-
310
350
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
350
500
μ
J
Diode Forward Voltage
V
EC
I
EC
= 7A
-
1.85
2.2
V
Diode Reverse Recovery Time
t
rr
I
EC
= 7A, dI
EC
/dt = 200A/
μ
s
-
-
37
ns
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
-
-
32
ns
Thermal Resistance Junction To Case
R
θ
JC
IGBT
-
-
2.1
o
C/W
Diode
-
-
3.0
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
25
50
75
100
125
150
4
0
8
16
12
6
2
10
14
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
600
30
I
C
,
10
20
200
300
100
0
400
500
50
0
40
700
T
J
= 150
o
C, R
G
= 50
, V
GE
= 15V
HGTP7N60B3D, HGT1S7N60B3DS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S7N60B3DS9A | 功能描述:IGBT 晶體管 14A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60B3S | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:14A, 600V, UFS Series N-Channel IGBTs |
| HGT1S7N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB |
| HGT1S7N60C3D | 功能描述:IGBT 晶體管 Optocoupler Phototransistor RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60C3DS | 功能描述:IGBT 晶體管 7A 600V TF=275NS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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