參數(shù)資料
型號(hào)： HGT1S7N60A4DS
廠商： INTERSIL CORP
元件分類： IGBT 晶體管
英文描述： AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount
中文描述： 34 A, 600 V, N-CHANNEL IGBT, TO-263AB
文件頁(yè)數(shù)： 5/8頁(yè)
文件大小： 134K
代理商： HGT1S7N60A4DS
2-5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
100
60
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
180
140
160
120
V
GE
= 15V, T
J
= 125
o
C
R
G
= 25
, L = 1mH, V
CE
= 390V
4
2
6
8
10
12
14
0
V
GE
= 12V, T
J
= 125
o
C
V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
20
40
30
60
80
50
70
R
G
= 25
, L = 1mH, V
CE
= 390V
90
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
4
2
6
8
10
12
14
0
I
C
,
0
40
60
8
9
11
12
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
80
100
120
7
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
20
13
10
V
G
,
Q
G
, GATE CHARGE (nC)
0
3
I
G(REF)
= 1mA, R
L
= 43
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 400V
6
9
12
15
5
10
15
20
30
25
35
40
0
V
CE
= 600V
I
CE
= 3.5A
0
200
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
400
125
25
150
800
E
T
,
μ
J
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 25
, L = 1mH, V
CE
= 390V, V
GE
= 15V
600
I
CE
= 14A
I
CE
= 7A
0.1
100
R
G
, GATE RESISTANCE (
)
1
10
1000
E
T
,
10
T
J
= 125
o
C, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 3.5A
I
CE
= 7A
I
CE
= 14A
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
相關(guān)PDF資料
PDF描述
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HGTG7N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S7N60A4DS9A 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S7N60A4S 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:600V, SMPS Series N-Channel IGBT
HGT1S7N60A4S9A 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S7N60A4S9A_04 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT
HGT1S7N60B3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
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