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參數(shù)資料
| 型號(hào)： | HGT1S3N60C3DS |
| 廠商： | Harris Corporation |
| 英文描述： | 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 第6A，600V的，的ufs系列N溝道IGBT的與反平行Hyperfast二極管 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 327K |
| 代理商： | HGT1S3N60C3DS |
3-11
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
C
,
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
6
8
10
12
0
2
4
8
10
12
14
14
6
16
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
4
18
20
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
I
C
,
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
2
4
6
8
10
12V
V
GE
= 15V
0
2
4
8
10
12
14
6
16
18
20
10V
8.0V
7.5V
9.0V
8.5V
7.0V
T
C
= 25
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%
I
C
,
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
0
2
4
8
10
12
14
6
16
18
20
I
C
,
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
= -40
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
T
C
= 150
o
C
25
50
75
100
125
150
0
1
2
3
4
5
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
7
6
I
S
,
0
20
30
50
t
S
,
μ
S
10
11
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
12
14
15
13
60
40
10
I
SC
t
SC
0
4
10
14
V
CE
= 360V, R
GE
= 82
, T
J
= 125
o
C
2
6
8
12
70
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S3N60C3DS9A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3A I(C) | TO-263AB |
| HGT1S5N120BNDS | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGT1S5N120BNDS9A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB |
| HGT1S5N120BNS | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs |
| HGT1S5N120BNS9A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB |
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