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參數(shù)資料
| 型號(hào)： | HGT1S3N60C3D |
| 廠商： | Harris Corporation |
| 英文描述： | 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 第6A，600V的，的ufs系列N溝道IGBT的與反平行Hyperfast二極管 |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大?。?/td> | 327K |
| 代理商： | HGT1S3N60C3D |
3-15
All Harris Semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call
1-800-4-HARRIS
NORTH AMERICA
Harris Semiconductor
P. O. Box 883, Mail Stop 53-210
Melbourne, FL 32902
TEL: 1-800-442-7747
(407) 729-4984
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EUROPE
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TEL: (65) 748-4200
FAX: (65) 748-0400
S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in pro-
duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam-
age problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as ECCOSORBD
LD26 or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
ECCOSORBD
is a Trademark of Emerson and Cumming, Inc.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5.
Gate Voltage Rating
- Never exceed the gate-voltage rat-
ing of V
GEM
. Exceeding the rated V
GE
can result in
permanent damage to the oxide layer in the gate region.
6.
Gate Termination
- The gates of these devices are essen-
tially capacitors. Circuits that leave the gate open-circuited
or floating should be avoided. These conditions can result
in turn-on of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7.
Gate Protection
- These devices do not have an internal
monolithic zener diode from gate to emitter. If gate pro-
tection is required an external zener is recommended.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S3N60C3DS | 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGTP3N60C3D | 3.3V 72-mc CPLD |
| HGTD3N60C3 | 6A, 600V, UFS Series N-Channel IGBTs |
| HGTD3N60C3S | 6A, 600V, UFS Series N-Channel IGBTs |
| HGTD3N60A4 | 600V, SMPS Series N-Channel IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S3N60C3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT1S3N60C3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3A I(C) | TO-263AB |
| HGT1S5N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGT1S5N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB |
| HGT1S5N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs |
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