- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371810 > HGT1S3N60A4DS (FAIRCHILD SEMICONDUCTOR CORP) 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode PDF資料下載
參數(shù)資料
| 型號： | HGT1S3N60A4DS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 17 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 130K |
| 代理商： | HGT1S3N60A4DS |
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
300
6
2
3
600
100
5
4
200
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 1.8
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 50
, L = 1mH, V
CE
= 390V
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
75
o
C
V
GE
15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
15
4
6
14
0
24
40
56
18
13
14
8
10
12
16
8
16
32
48
20
64
V
CE
= 390V, R
G
= 50
, T
J
= 125
o
C
t
SC
I
SC
0
2
3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
4
8
4
5
16
12
20
1
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
4
8
16
12
20
0
2
3
4
1
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
E
O
,
μ
J
160
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
120
40
200
3
2
4
5
6
01
240
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
120
E
O
,
μ
J
0
20
80
40
100
140
60
3
2
4
5
6
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
HGT1S3N60A4DS, HGTP3N60A4D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S3N60A4DS9A | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP3N60A4 | 600V, SMPS Series N-Channel IGBT |
| HGTD3N60A4S | 600V, SMPS Series N-Channel IGBT |
| HGT1S3N60A4S | 600V, SMPS Series N-Channel IGBT |
| HGTP3N60B3 | 7A, 600V, UFS Series N-Channel IGBTs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S3N60A4DS9A | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S3N60A4S | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:600V, SMPS Series N-Channel IGBT |
| HGT1S3N60A4S9A | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S3N60B3DS | 制造商:Harris Corporation 功能描述: |
| HGT1S3N60B3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。