參數(shù)資料
型號(hào): HGT1S3N60A4DS
廠商: INTERSIL CORP
元件分類: IGBT 晶體管
英文描述: 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述: 17 A, 600 V, N-CHANNEL IGBT, TO-263AB
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 130K
代理商: HGT1S3N60A4DS
7
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 25. SWITCHING TEST WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
400
800
t
r
,
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
200
600
6
22
10
14
18
26
1000
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
I
EC
= 3A, V
CE
= 390V
160
80
40
0
Q
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
1000
200
400
200
600
800
120
125
o
C, I
EC
= 3A
125
o
C, I
EC
= 1.5A
25
o
C, I
EC
= 20A
25
o
C, I
EC
= 10A
V
CE
= 390V
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
R
G
= 50
L = 1mH
V
DD
= 390V
+
-
HGTP3N60A4D
DIODE TA49369
DUT
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
I
CE
E
OFF
E
0N2
HGT1S3N60A4DS, HGTP3N60A4D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S3N60A4DS9A 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S3N60A4S 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:600V, SMPS Series N-Channel IGBT
HGT1S3N60A4S9A 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S3N60B3DS 制造商:Harris Corporation 功能描述:
HGT1S3N60B3DS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB