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參數(shù)資料
| 型號： | HFM305 |
| 廠商： | RECTRON LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes) |
| 中文描述： | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 284K |
| 代理商： | HFM305 |
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.24 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
HFM301
THRU
HFM308
DO-214AB
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
NOTES :
1. Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
1998-8
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
Volts
Volts
Volts
Amps
3.0
200
70
-65 to + 175
Amps
pF
0
C
UNITS
50
Maximum DC Reverse Current at
Rated DC Blocking Voltage
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
UNITS
uAmps
uAmps
uAmps
nSec
Maximum Full Load Reverse Current, Full cycle Average
T
A
= 55
o
C
Maximum Forward Voltage at 3.0A DC
Volts
10
150
50
Maximum Reverse Recovery Time (Note 1)
HFM301
HFM306
HFM303
HFM307 HFM308
HFM304
50
1.0
1.7
75
HFM301
50
35
50
HFM302
100
70
100
HFM304
300
210
300
HFM305
400
280
400
HFM307
800
560
800
HFM308
1000
700
1000
HFM303
200
140
200
HFM306
600
420
600
HFM302
HFM305
1.3
@T
A
= 25
@T
A
= 125
o
C
o
C
150
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HFM306 | SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes) |
| HFM307 | Ultra fast recovery type |
| HFM301 | Ultra fast recovery type |
| HFM302 | Ultra fast recovery type |
| HFM303 | Ultra fast recovery type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HFM305L | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere |
| HFM305-W | 功能描述:整流器 3A 400V 50ns GP RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HFM305-W-S-R01 | 功能描述:二極管 - 通用，功率，開關(guān) Hi Eff Si Rect SMC,3A,400V,50ns,GP RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| HFM305-W-S-R01-W | 功能描述:整流器 3A 400V 50ns GP RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HFM306 | 功能描述:二極管 - 通用，功率，開關(guān) Hi Eff Si Rect SMC,3A,600V,70ns,GP RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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