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參數(shù)資料
| 型號(hào)： | HFM104-L |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Chip Silicon Rectifier - Ultra fast recovery type |
| 中文描述： | 芯片硅整流-超快速恢復(fù)類(lèi)型 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 27K |
| 代理商： | HFM104-L |
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
HFM101
THRU
HFM108
DO-214AC
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
Dimensions in inches and (millimeters)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
Volts
Volts
Volts
Amps
1.0
30
15
-65 to + 150
Amps
pF
mJ
0
C
UNITS
12
HFM101
50
35
50
HFM102
100
70
100
HFM104
300
210
300
HFM105
400
280
400
HFM107
800
560
800
HFM108
1000
700
1000
HFM103
200
140
200
HFM106
600
420
600
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.209 (5.31)
0.185 (4.70)
0.035 (0.89)
0.059 (1.50)
0.067 (1.70)
0.091 (2.31)
0.160(4.06)
0.180(4.57)
0.086 (2.18)
0.110 (2.79)
0.067 (1.70)
0.051 (1.29)
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
NOTES : 1. Test Conditions: I
F
=0.5A, I
R
=-1.0A, I
RR
=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
2002-2
Maximum DC Reverse Current at
Rated DC Blocking Voltage
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
UNITS
uAmps
uAmps
uAmps
nSec
Maximum Full Load Reverse Current, Full cycle Average
T
A
= 55
o
C
Maximum Forward Voltage at 1.0A DC
Volts
5.0
100
50
Maximum Reverse Recovery Time (Note 1)
HFM101
HFM106
HFM103
HFM107 HFM108
HFM104
50
1.0
1.7
75
HFM102
HFM105
1.3
@T
A
= 25
@T
A
= 125
o
C
o
C
Pulse energy, non repetitive(inductive load switch off )
ER
20
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PDF描述 |
|---|---|
| HFM104-M | Ultra fast recovery type |
| HFM104-MH | Chip Silicon Rectifier - Ultra fast recovery type |
| HFM105 | Ultra fast recovery type |
| HFM105-L | Chip Silicon Rectifier - Ultra fast recovery type |
| HFM105-M | Ultra fast recovery type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HFM104M | 制造商:WEITRON 制造商全稱(chēng):Weitron Technology 功能描述:Surface Mount Ultra Fast Recovery Rectifiers |
| HFM104-M | 制造商:PACELEADER 制造商全稱(chēng):PACELEADER INDUSTRIAL 功能描述:ULTRA FAST RECOVER TYPE |
| HFM104-MH | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:Chip Silicon Rectifier - Ultra fast recovery type |
| HFM104-MU1G | 制造商:CHENDA 制造商全稱(chēng):Chendahang Electronics Co., Ltd 功能描述:SURFACE MOUNT HIGH EFFICIENCY RECTIFIER |
| HFM104W | 制造商:RECTRON 制造商全稱(chēng):Rectron Semiconductor 功能描述:SURFACE MOUNT HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere |
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