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參數(shù)資料
| 型號： | HFB60HF20C |
| 元件分類： | 整流器 |
| 英文描述： | 60 A, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SMD-1, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 123K |
| 代理商： | HFB60HF20C |
2
www.irf.com
HFB60HF20C
A/s
nC
A
Dynamic Recovery Characteristics ( Per Leg ) @ TJ = 25°C (unless otherwise specified)
A/s
nC
A
Parameter
Min.
Typ. Max. Units
Test Conditions
trr
Reverse Recovery Time
—
35
ns
IF = 1.0A,VR = 30V, dif/dt = 200A/s
trr1
Reverse Recovery Time
—
35
—
ns
TJ = 25°C
See Fig.
trr2
—
58
—
TJ = 125°C
5
IF = 60A
IRRM1
Peak Recovery Current
—
3.8
—
TJ = 25°C
See Fig.
IRRM2
—
8.0
—
TJ = 125°C
6
VR = 160V
Qrr1
Reverse Recovery Charge
—
77
—
TJ = 25°C
See Fig.
Qrr2
—
240
—
TJ = 125°C
7
dif/dt = 200A/s
di(rec)M/dt1
Peak Rate of Fall of Recovery Current
—
470
—
TJ = 25°C
See Fig.
di(rec)M/dt2
During tb
—
640
—
TJ = 125°C
8
Thermal - Mechanical Characteristics
Parameter
Typ.
Max.
Units
RthJC
Junction-to-Case, Single Leg Conducting
—
2.73
Wt
Weight
2.6
—
g
°C/W
See Fig. 2
Parameter
Min. Typ. Max. Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
200
—
V
IR = 100A
Electrical Characteristics ( Per Leg ) @ TJ = 25°C (unless otherwise specified)
LS
Series Inductance
—
5.9
—
nH
Measured from center of cathode pad
to center of anode pad
CT
Junction Capacitance, See Fig. 3
—
140
pF
VR = 200V
IR
Reverse Leakage Current
—
10
A
VR = VR Rated
See Fig. 2
—
100
A
VR = VR Rated, TJ = 125°C
VF
Forward Voltage
—
1.19
IF = 30A, TJ = -55°C
See Fig. 1
—
1.08
IF = 30A, TJ = 25°C
—
1.25
IF = 60A, TJ = 25°C
—
1.22
IF = 60A, TJ = 125°C
V
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