參數(shù)資料
型號(hào): HFB35HB20
英文描述: 200V 35A Hi-Rel Ultra-Fast Discrete Diode in a TO-254AA package
中文描述: 200伏35A條,高可靠性超快速分立二極管采用TO - 254AA封裝
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 104K
代理商: HFB35HB20
03/23/01
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
Features
Description
HEXFRED
extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies
the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber
in most applications. These devices are ideally suited for power converters, motors drives and other applications
where switching losses are significant portion of the total losses.
TM
diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An
Ultrafast, Soft Recovery Diode
HEXFRED
TM
V
R
= 200V
I
F(AV)
= 35A
t
rr
= 35ns
Note:
D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
HFB35HB20
www.irf.com
1
Parameter
Cathode to Anode Voltage
Continuous Forward Current,
Single Pulse Forward Current,
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Max.
200
35
150
125
-55 to +150
Units
V
V
R
I
F(AV)
I
FSM
P
D
@ T
C
= 25°C
T
J,
T
STG
T
C
= 80°C
T
C
= 25°C
W
°C
A
Absolute Maximum Ratings
CASE STYLE
TO-254AA
ANODE
CATHODE
(ISOLATED BASE)
PD - 94100
相關(guān)PDF資料
PDF描述
HFB50HC20 200V 50A Hi-Rel Ultra-Fast Discrete Diode in a TO-258AA package
HFB50HC20C 200V 50A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-258AA package
HFB50HI20 200V 50A Hi-Rel Ultra-Fast Discrete Diode in a TO-259AA package
HFB50HI20C 200V 50A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-259AA package
HFBR1100 Optoelectronic
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