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參數(shù)資料
| 型號(hào)： | HFA75MB40C |
| 廠商： | International Rectifier |
| 英文描述： | Ultrafast, Soft Recovery Diode HEXFRED |
| 中文描述： | 超快，軟恢復(fù)二極管HEXFRED二極 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 278K |
| 代理商： | HFA75MB40C |
PD -2.475A
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Features
Description
HEXFRED
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
T M
diodes are optimized to reduce losses and EMI/RFI in high frequency
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA75MB40C
Absolute Maximum Ratings (per Leg)
Note:
Limited by junction temperature
L = 100μH, duty cycle limited by max T
J
125°C
A
W
°C/W
K/W
Thermal - Mechanical Characteristics
Parameter
R
θ
JC
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
R
θ
CS
Case-to-Sink, Flat, Greased Surface
Wt
Weight
Mounting Torque
-55 to +150
35 (4.0)
50 (5.7)
COMMON
CATHODE
ANODE
2
ANODE
1
(1-3)
(4-6)
(7-9)
(ISOLATED BASE)
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Single Pulse Avalanche Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
400
75
36
300
5.0
1.4
125
50
Units
V
V
R
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FSM
I
AS
E
AS
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
mJ
°C
300 (0.063 in. (1.6mm) from case)
Min.
Typ.
0.10
58 (2.0)
Max.
1.0
0.50
Units
g (oz)
lbfin
(Nm)
D-60
(MODIFIED T0-249AA)
A
5/5/97
V
R
= 400V
V
F
(typ.)
= 1V
I
F(AV)
= 75A
Q
rr
(typ.) = 200nC
I
RRM
(typ.)
= 6A
t
rr
(typ.)
= 30ns
di
(rec)M
/dt (typ.)
= 190A/μs
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