參數(shù)資料
型號： HFA3134
廠商： Intersil Corporation
英文描述： Ultra High Frequency Matched Pair Transistors
中文描述： 超高頻晶體管配對
文件頁數(shù)： 3/5頁
文件大小： 52K
代理商： HFA3134
4-452
DYNAMIC CHARACTERISTICS FOR HFA3134 (NPN)
Noise Figure
NF
f = 1.0GHz, I
C
= 10mA,
1V
≤
V
CE
≤
5V, Z
S
= 50
B
-
2.4
-
dB
f = 1.0GHz, I
C
= 1mA,
1V
≤
V
CE
≤
5V, Z
S
= 50
B
-
2.6
-
dB
Current Gain-Bandwidth Product
(Note 5)
f
T
I
C
= 10mA, V
CE
= 5V
B
-
8.5
-
GHz
I
C
= 1mA, V
CE
= 5V
B
-
3
-
GHz
Power Gain-Bandwidth Product
f
MAX
I
C
= 10mA, V
CE
= 5V
B
-
7.5
-
GHz
Base-to-Emitter Capacitance
V
BE
= -0.5V
B
-
600
-
fF
Collector-to-Base Capacitance
V
CB
= 3V
B
-
500
-
fF
Electrical Specifications
T
A
= 25
o
C
PARAMETER
SYMBOL
TEST CONDITIONS
TEST
LEVEL
(NOTE 3)
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR HFA3135 (PNP)
Collector-to-Base Breakdown Voltage
V
(BR)CBO
I
C
= -10
μ
A, I
E
= 0
A
12
21
-
V
Collector-to-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= -100
μ
A, I
B
= 0
A
4
14
-
V
V
(BR)CER
I
C
= -100
μ
A, R
B
= 10k
A
11
23
-
V
Emitter-to-Base Breakdown Voltage (Note 4)
V
(BR)EBO
I
E
= -10
μ
A, I
C
= 0
B
-
5
-
V
Collector-Cutoff-Current
I
CEO
V
CE
= -6V, I
B
= 0
A
-5
-
5
nA
Collector-Cutoff-Current
I
CBO
V
CB
= -8V, I
E
= 0
A
-5
-
5
nA
Emitter-Cutoff-Current
I
EBO
V
EB
= -1V, I
C
= 0
B
-
TBD
-
pA
Collector-to-Collector Leakage
B
-
1
-
nA
Collector-to-Emitter Saturation Voltage
V
CE(SAT)
I
C
= -10mA, I
B
= -1mA
A
-
150
250
mV
Base-to-Emitter Voltage
V
BE
I
C
= -10mA, V
CE
= -2V
A
-
850
1000
mV
Q
1
to Q
2
Base-to-Emitter Voltage Match
V
BE
I
C
= -10mA, V
CE
= -2V
A
-
1
6
mV
I
C
= -1mA, V
CE
= -2V
A
-
1
6
mV
I
C
= -0.1mA, V
CE
= -2V
A
-
2
6
mV
DC Forward-Current Transfer Ratio
h
FE
I
C
= -10mA, V
CE
= -2V
A
15
40
125
I
C
= -1mA, V
CE
= -2V
A
15
47
125
I
C
= -0.1mA, V
CE
= -2V
A
15
52
125
I
C
= -10mA, V
CE
= -5V
A
15
47
125
I
C
= -1mA, V
CE
= -5V
A
15
53
125
I
C
= -0.1mA, V
CE
= -5V
A
15
57
125
Q
1
to Q
2
Current Gain Match
h
FE
-1mA
≤
I
C
≤
-10mA,
-1V
≤
V
CE
≤
-5V
A
-
1
8
%
Early Voltage
V
A
I
C
= -1mA,
V
CE
= -3V
A
15
24
-
V
Base-to-Emitter Voltage Drift
I
C
= -10mA
C
-
-1.4
-
mV/
o
C
Electrical Specifications
T
A
= 25
o
C
PARAMETER
SYMBOL
TEST CONDITIONS
TEST
LEVEL
(NOTE 3)
MIN
TYP
MAX
UNITS
HFA3134, HFA3135
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HFA3134_05 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Ultra High Frequency Matched Pair Transistors
HFA3134IH96 功能描述:IC TRANSISTOR UHF SOT-23-6 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
HFA3134IHZ96 功能描述:射頻雙極小信號晶體管 W/ANNEAL TXARRAY 2X NPN MATCHED INDE RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
HFA3135 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Ultra High Frequency Matched Pair Transistors
HFA3135IH96 功能描述:IC TRANS ARRAY PNP MATCH SOT23-6 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
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