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參數(shù)資料
| 型號： | HFA3101B96 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Gilbert Cell UHF Transistor Array |
| 中文描述： | 6 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 905K |
| 代理商： | HFA3101B96 |
12
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Die Characteristics
PROCESS
UHF-1
DIE DIMENSIONS:
53 mils x 52 mils x 14 mils
1340
μ
m x 1320
μ
m x 355.6
μ
m
METALLIZATION:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8k
±
0.5k
Type: Metal 2: AlCu(2%)
Thickness: Metal 2: 16k
±
0.8k
PASSIVATION:
Type: Nitride
Thickness: 4k
±
0.5k
SUBSTRATE POTENTIAL (Powered Up):
Floating
Metallization Mask Layout
HFA3101
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HFA3101
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HFA3101BZ | Gilbert Cell UHF Transistor Array |
| HFA3101 | Gilbert Cell UHF Transistor Array(Gb 單元超高頻晶體管陣列) |
| HFA3101BZ96 | Gilbert Cell UHF Transistor Array |
| HFA3134IH96 | Ultra High Frequency Matched Pair Transistors |
| HFA3134 | Ultra High Frequency Matched Pair Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HFA3101BZ | 功能描述:射頻雙極小信號晶體管 TXARRAY NPN GILBERT CELL 8W RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| HFA3101BZ | 制造商:Intersil Corporation 功能描述:TRANSISTOR ARRAY |
| HFA3101BZ | 制造商:Intersil Corporation 功能描述:IC TRANSISTOR ARRAY GILBERT 制造商:Intersil Corporation 功能描述:IC TRANSISTOR ARRAY, GILBERT |
| HFA3101BZ96 | 功能描述:射頻雙極小信號晶體管 TXARRAY NPN GILBERT CELL 8W MILEL RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| HFA3102 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Dual Long-Tailed Pair Transistor Array |
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