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參數(shù)資料
| 型號(hào)： | HFA16TB120S |
| 英文描述： | 1200V 16A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package |
| 中文描述： | 1200伏16A條HEXFRED二極分立二極管一名D2級(jí)，白（HEXFRED二極）封裝 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 296K |
| 代理商： | HFA16TB120S |
PD-2.454 rev. B 12/98
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of
Recovery Parameters
Features
Description
HEXFRED
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally
suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
TM
diodes are optimized to reduce losses and EMI/RFI in high frequency
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA160MD40C
LUG
TERMINAL
ANODE 1
LUG
TERMINAL
ANODE 2
LUG
TERMINAL
CATHODE
V
R
= 400V
V
F
(typ.)
= 0.9V
I
F(AV)
= 160A
Q
rr
(typ.) = 260nC
I
RRM
(typ.)
= 7.1A
t
rr
(typ.)
= 50ns
di
(rec)M
/dt (typ.)
= 260A/μs
Isolated Base
Parameter
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
Case-to-Sink, Flat , Greased Surface
Weight
Mounting Torque
Terminal Torque
Vertical Pull
2 inch Lever Pull
Min.
30 (3.4)
30 (3.4)
Typ.
0.10
79 (2.8)
Max.
0.55
0.28
40 (4.6)
40 (4.6)
80
35
Units
R
thJC
R
thCS
Wt
g (oz)
lbfin
(Nm)
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
400
142
68
900
1.4
225
91
Units
V
V
R
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FSM
E
AS
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Thermal - Mechanical Characteristics
mJ
Note:
Limited by junction temperature
L = 100μH, duty cycle limited by max T
J
125°C
Mounting surface must be smooth, flat, free or burrs or other
protrusions. Apply a thin even film or thermal grease to mounting
surface. Gradually tighten each mounting bolt in 5-10 lbfin steps
until desired or maximum torque limits are reached. Module
Absolute Maximum Ratings (per Leg)
°C/W
K/W
-55 to +150
W
A
C
lbfin
1
TO-244AB
(ISOLATED)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HFA16TB120 | Ultrafast, Soft Recovery Diode |
| HFA16PB120 | XC95216-15HQ208I - NOT RECOMMENDED for NEW DESIGN |
| HFA180NH40 | 400V 180A HEXFRED Discrete Diode in a D-67 Half-Pak package |
| HFA2-0002-5 | Low Noise Wideband Operational Amplifier |
| HFA3-0002-5 | Low Noise Wideband Operational Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HFA16TB120SPBF | 制造商:Vishay Angstrohm 功能描述:Diode Switching 1.2KV 16A 3-Pin(2+Tab) D2PAK Tube 制造商:Vishay Semiconductors 功能描述:FAST RECOVERY DIODE 16A 1.2KV D2PAK |
| HFA16TB120STRL | 功能描述:整流器 1200 Volt 16 Amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HFA16TB120STRLP | 制造商:Vishay Angstrohm 功能描述:Diode Switching 1.2KV 16A 3-Pin(2+Tab) D2PAK T/R |
| HFA16TB120STRR | 功能描述:整流器 1200 Volt 16 Amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HFA16TB120STRRP | 制造商:Vishay Angstrohm 功能描述:Diode Switching 1.2KV 16A 3-Pin(2+Tab) D2PAK T/R |
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