648
20.1.6
Flash Memory Characteristics
Table 20.10 lists the flash memory characteristics.
Table 20.10 Flash Memory Characteristics (1)
Conditions: V
CC
= AV
CC
= 4.5 to 5.5 V, V
SS
= AV
SS
= 0 V,
T
a
= 0 to +75
°
C (flash memory programming/erase operating temperature range;
regular specifications) T
a
= 0 to +85
°
C (flash memory programming/erase operating
temperature range; wide-range specifications)
Item
Symbol
Min
Typ
Max
Unit
Test
Conditions
Programming time
*
1,
*
2,
*
4
t
P
—
10
200
ms/
32 bytes
Erase time
*
1,
*
3,
*
5
t
E
—
100
1200
ms/block
Number of programmings
N
WEC
—
—
100
Times
Programming Wait time after setting SWE bit
*
1
x
10
—
—
μ
s
Wait time after setting PSU bit
*
1
y
50
—
—
μ
s
Wait time after setting P bit
*
1,
*
4
z
150
—
200
μ
s
Wait time after clearing P bit
*
1
α
10
—
—
μ
s
Wait time after clearing PSU bit
*
1
β
10
—
—
μ
s
Wait time after setting PV bit
*
1
γ
4
—
—
μ
s
Wait time after H'FF dummy write
*
1
ε
2
—
—
μ
s
Wait time after clearing PV bit
*
1
η
4
—
—
μ
s
Max. number of programmings
*
1,
*
4
N
—
—
1000
*
5
Times
z = 200
μ
s
Erase
Wait time after setting SWE bit
*
1
x
10
—
—
μ
s
Wait time after setting ESU bit
*
1
y
200
—
—
μ
s
Wait time after setting E bit
*
1,
*
6
z
5
—
10
μ
s
Wait time after clearing E bit
*
1
α
10
—
—
μ
s
Wait time after clearing ESU bit
*
1
β
10
—
—
μ
s
Wait time after setting EV bit
*
1
γ
20
—
—
μ
s
Wait time after H'FF dummy write
*
1
ε
2
—
—
μ
s
Wait time after clearing EV bit
*
1
η
5
—
—
μ
s
Max. number of erases
*
1,
*
5
N
120
—
240
Times
Notes: 1. Time settings should be made in accordance with the programming/erase algorithm.
2. Programming time per 32 bytes. (Indicates the total time the P bit in the flash memory
control register (FLMCR1) is set. The program verification time is not included.)
3. Time to erase one block. (Indicates the total time the E bit in FLMCR1 is set. The erase
verification time is not included.)
4. Write time maximum value (t
(max.) = wait time after P bit setting (z)
×
maximum
number of programmings (N)).