參數(shù)資料
型號: HEF4720BP
廠商: NXP SEMICONDUCTORS
元件分類: SRAM
英文描述: 256-bit, 1-bit per word random access memories
中文描述: 256 X 1 STANDARD SRAM, 580 ns, PDIP16
封裝: PLASTIC, DIP-16
文件頁數(shù): 14/16頁
文件大?。?/td> 180K
代理商: HEF4720BP
January 1995
14
Philips Semiconductors
Product specification
256-bit, 1-bit per word random access memories
HEF4720B
HEF4720V
Fig.9
Use of battery-operated LOCMOS gates to isolate the memory in case of power supply failure. Devices
marked (1) are connected to the battery. The HEF4011B can sink about 0,7 mA: if the load is greater than
this, only the memory should be connected, other loads being connected to the address latch as shown
by the dashed-line connections.
(1) These devices have a battery supply.
(2) Alternative connection.
相關(guān)PDF資料
PDF描述
HEF4720BT 256-bit, 1-bit per word random access memories
HEF4720 256-bit, 1-bit per word random access memories
HEF4724BD 8-bit addressable latch
HEF4724BF 8-bit addressable latch
HEF4724BN 8-bit addressable latch
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