參數(shù)資料
型號(hào): HEF4720BD
廠商: NXP SEMICONDUCTORS
元件分類: SRAM
英文描述: 256-bit, 1-bit per word random access memories
中文描述: 256 X 1 STANDARD SRAM, 580 ns, CDIP16
封裝: CERDIP-16
文件頁(yè)數(shù): 4/16頁(yè)
文件大?。?/td> 180K
代理商: HEF4720BD
January 1995
4
Philips Semiconductors
Product specification
256-bit, 1-bit per word random access memories
HEF4720B
HEF4720V
AC CHARACTERISTICS
A.C. CHARACTERISTICS
V
SS
= 0 V; T
amb
= 25
°
C; C
L
= 50 pF; input transition times
20 ns
V
DD
V
SYMBOL
MIN.
TYP.
MAX.
5
5
5
5
pF
pF
pF
Output capacitance
10
15
C
O
V
DD
V
SYMBOL
MIN.
TYP.
MAX.
TYPICAL EXTRAPOLATION
FORMULA
Read cycle
5
320
130
100
580
220
160
180
70
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
292 ns
+
(0,55 ns/pF) C
L
118 ns
+
(0,23 ns/pF) C
L
92 ns
+
(0,16 ns/pF) C
L
Read access time
10
15
t
ACC
Chip select to
output time
5
10
15
5
10
15
5
10
15
t
CO
0
0
0
Address hold time
t
OA
Output hold time
with respect to
address input
Output hold time
with respect to
chip select input
Output floating time
with respect to
chip select input
60
20
15
170
50
40
142 ns
+
(0,55 ns/pF) C
L
38 ns
+
(0,23 ns/pF) C
L
32 ns
+
(0,16 ns/pF) C
L
t
VAL1
5
130
70
60
10
15
t
COH
5
0
0
0
10
15
t
COF
5
580
220
160
Read cycle time
10
15
5
10
15
t
RC
Output transition
times
LOW to HIGH
60
30
20
40
22
15
120
60
40
80
40
30
10 ns
+
(1,0 ns/pF) C
L
9 ns
+
(0,42 ns/pF) C
L
6 ns
+
(0,28 ns/pF) C
L
14 ns
+
(0,52 ns/pF) C
L
11 ns
+
(0,22 ns/pF) C
L
7 ns
+
(0,16 ns/pF) C
L
t
TLH
5
HIGH to LOW
10
15
t
THL
相關(guān)PDF資料
PDF描述
HEF4720BF 256-bit, 1-bit per word random access memories
HEF4720BN 256-bit, 1-bit per word random access memories
HEF4720BP 256-bit, 1-bit per word random access memories
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HEF4720 256-bit, 1-bit per word random access memories
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