參數(shù)資料
型號: HEC4013BT,118
廠商: NXP Semiconductors
文件頁數(shù): 11/16頁
文件大?。?/td> 0K
描述: IC FLIP FLOP DUAL D TYPE 14-SOIC
產(chǎn)品培訓模塊: Logic Packages
標準包裝: 2,500
系列: 4000B
功能: 設(shè)置(預設(shè))和復位
類型: D 型
輸出類型: 差分
元件數(shù): 2
每個元件的位元數(shù): 1
頻率 - 時鐘: 40MHz
觸發(fā)器類型: 正邊沿
輸出電流高,低: 3.4mA,3.4mA
電源電壓: 3 V ~ 15 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
包裝: 帶卷 (TR)
HEF4013B
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 21 November 2011
4 of 16
NXP Semiconductors
HEF4013B
Dual D-type flip-flop
8.
Limiting values
[1]
For DIP14 packages: above Tamb = 70 C, Ptot derates linearly with 12 mW/K.
[2]
For SO14 packages: above Tamb = 70 C, Ptot derates linearly with 8 mW/K.
[3]
For TSSOP14 packages: above Tamb = 60 C, Ptot derates linearly with 5.5 mW/K.
9.
Recommended operating conditions
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).
Symbol
Parameter
Conditions
Min
Max
Unit
VDD
supply voltage
0.5
+18
V
IIK
input clamping current
VI < 0.5 V or VI >VDD + 0.5 V
-
10
mA
VI
input voltage
0.5
VDD + 0.5
V
IOK
output clamping current
VO < 0.5 V or VO >VDD + 0.5 V
-
10
mA
II/O
input/output current
-
10
mA
IDD
supply current
-
50
mA
Tstg
storage temperature
65
+150
C
Tamb
ambient temperature
40
+125
C
Ptot
total power dissipation
Tamb = 40 C to +125 C
DIP14
750
mW
SO14
500
mW
TSSOP14
500
mW
P
power dissipation
per output
-
100
mW
Table 5.
Recommended operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
VDD
supply voltage
3
15
V
VI
input voltage
0
VDD
V
Tamb
ambient temperature
40
+125
C
t/V
input transition rise and fall rate
VDD = 5 V
-
3.75
s/V
VDD = 10 V
-
0.5
s/V
VDD = 15 V
-
0.08
s/V
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