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參數(shù)資料
| 型號(hào)： | HE8550-TO-92 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | PNP EPITAXIAL SILIC ON TRANSISTOR |
| 中文描述： | 進(jìn)步黨對(duì)晶體管外延水磨石英 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 77K |
| 代理商： | HE8550-TO-92 |
UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-010,A
CLASSIFICATION OF hFE
RANK
RANGE
TYPICAL PERFORMANCE CHARACTERISTICS
C
D
E
120-200
160-300
250-500
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
I
-0
-0.4
-0.8
-1.2
-1.6
-2.0
0
-0.1
-0.2
-0.3
-0.4
-0.5
I
B
=-0.5mA
I
B
=-1.0mA
I
B
=-1.5mA
I
B
=-2.0mA
I
B
=-2.5mA
I
B
=-3.0mA
Fig.2 DC current Gain
Ic,Collector current (mA)
H
F
,
102
101
100
103
-103
-102
-101
-100
-101
V
CE
=-1V
Fig.3 Base-Emitter on Voltage
I
Base-Emitter voltage (V)
0
-0.2
-0.4
-0.6
-0.8
-1.0
V
CE
=-1V
Ic,Collector current (mA)
S
-101
-102
-103
-104
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
103
C
p
T
(
100
101
102
V
CE
=-10V
Collector-Base voltage (V)
C
103
100
101
102
f=1MHz
I
E
=0
-100
-101
-102
-103
-103
-102
-101
-100
-101
-100
-101
-102
-103
-100
-101
-102
-103
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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