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參數(shù)資料
| 型號： | HD74CBT1G126 |
| 英文描述： | Datasheet|ADE-205-661|JAN.31.02|80K |
| 中文描述： | 技術(shù)資料|腺- 205 - 661 | JAN.31.02 | 80,000 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 90K |
| 代理商： | HD74CBT1G126 |
HD74CBT3384A
Rev.0, Jan. 2002, page 5 of 10
DC Electrical Characteristics
(Ta =
40 to 85°C)
Item
Symbol
V
CC (V)
Min
Typ
*1
Max
Unit
Test conditions
Clamp diode voltage
V
IK
4.5
1.2
V
I
IN = 18 mA
Input voltage
V
IH
4.0 to 5.5
2.0
V
IL
4.0 to 5.5
0.8
On-state switch
resistance
*2
R
ON
4.0
14
20
V
IN = 2.4 V,
I
IN = 15 mA
Typ at V
CC = 4.0 V
4.5
57
V
IN = 0 V,
I
IN = 64 mA
4.5
57
V
IN = 0 V,
I
IN = 30 mA
4.5
10
15
V
IN = 2.4 V,
I
IN = 15 mA
Input current
I
IN
0 to 5.5
±1.0
AV
IN = 5.5 V or GND
Off-state leakage
current
I
OZ
5.5
±1.0
A0 ≤ A, B ≤ V
CC
Quiescent supply
current
I
CC
5.5
3
AV
IN = VCC or GND,
I
O = 0 mA
Increase in I
CC
per input
*3
I
CC
5.5
2.5
mA
One input at 3.4 V,
other inputs at V
CC or
GND
Notes:
For condition shown as Min or Max use the appropriate values under recommended operating
conditions.
1. All typical values are at V
CC = 5 V (unless otherwise noted), Ta = 25°C.
2. Measured by the voltage drop between the A and B terminals at the indicated current through the
switch. On-state resistance is determined by the lower voltage of the two (A or B) terminals.
3. This is the increase in supply current for each input that is at the specified TTL voltage level
rather than V
CC or GND.
Capacitance
(Ta = 25°C)
Item
Symbol
V
CC (V)
Min
Typ
Max
Unit
Test conditions
Control input
capacitance
C
IN
5.0
3
pF
V
IN = 0 or 3 V
Input / output
C
I/O (OFF)
5.0
5
pF
V
O = 0 or 3 V
capacitance
OE = V
CC
Note:
This parameter is determined by device characterization is not production tested.
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