參數(shù)資料
型號(hào): HCT802
廠商: OPTEK TECHNOLOGY INC
元件分類: 小信號(hào)晶體管
英文描述: Dual En hance ment Mode MOSFET
中文描述: 2000 mA, 90 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 178K
代理商: HCT802
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396
15-34
Ab so ute Maxi mum Rat ngs
Drain- Source Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 V
Gate- Source Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
20 V
Drain Cur ent (Lim ted by Tj max) N- Channel. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
P- Channel. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 A
Op er at ng and Stor age Tem pera ure . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Power Dis si pa ion
T
A
= 25
o
C (Both de vices equally driven) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W To al
T
S
= 25
o
C (Both de vices equally driven). . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W To al
(1)
(Ts = Substrate that the package is soldered to)
Notes
(1) This rating is provided as an aid to designers. It is dependent upon mounting material and
methods and is not measureable as an outgoing test.
Prod uct Bul e in HCT802
Sep em ber 1996
Dual En hance ment Mode MOS FET
Types HCT802, HCT802TX, HCT802TXV
Fea ures
6 pad surface mount package
V
DS
= 90V
R
DS(on)
<5
I
D(on)
N-Channel = 1.5A
P-Channel = 1.1A
Two devices selected for V
DS
, I
D(on)
and R
DS(on)
similarity
Full TX Processing Available
Gold plated contacts
De scrip ion
HCT802 offers an N-Channel and P-
Channel MOS transistor in a hermetic
ceramic surface mount package. The
devices used are similar to industry
standards 2N6661 N-Channel device
and VP1008 P-Channel device. These
two enhancement mode MOSFETS
are particularly well matched for V
DS
,
I
DS(on)
, R
DS(on)
and G
fs
.
Order HCT802TX for processing per
MIL-PRF-19500. Typical screening
and lot acceptance tests are provided
on page 13-4. TX products receive a
V
GS
HTRB at 16 V for 48 hrs. at 150
o
C and a V
DS
HTRB at 72 V for 160 hrs.
at 150
o
C.
相關(guān)PDF資料
PDF描述
HCT802TX Dual En hance ment Mode MOSFET
HCT802TXV Dual En hance ment Mode MOSFET
HD-0070M3-GH 3 dB 90∑ Card Couplers
HD-0313M3-FH Hook-Up Wire; Conductor Size AWG:26; No. Strands x Strand Size:7 x 34; Jacket Color:Black; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061; CSA AWM; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
HD-0053M3-IH 3 dB 90∑ Card Couplers
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HCT802TX 功能描述:MOSFET DUAL ENHANCE HERMETIC SMD RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道(雙) FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A,10V Id 時(shí)的 Vgs(th)(最大):3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
HCT802TXV 功能描述:MOSFET DUAL ENHANCE HERMETIC SMD RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道(雙) FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A,10V Id 時(shí)的 Vgs(th)(最大):3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
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