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參數(shù)資料
| 型號： | HCPL-3101 |
| 英文描述： | Power MOSFET/IGBT Gate Drive Optocouplers(功率 MOSFET/IGBT門驅(qū)動耦合器) |
| 中文描述： | 功率MOSFET / IGBT柵極驅(qū)動光電耦合器（功率MOSFET的/ IGBT的門驅(qū)動耦合器） |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 257K |
| 代理商： | HCPL-3101 |
6
Switching Specifications
(T
A
= 25
°
C)
Parameter
Sym.
Device
Min.
Typ.
Max. Units
Test Conditions
Fig.
Note
Propagation
Delay Time to
High Output
Level
t
PLH
HCPL-3100
-
1
2
μ
s
I
F
= 10 mA
V
CC
= 24 V,
V
O1
= 24 V,
R
G
= 47
,
C
G
= 3000 pF
9,
25,
26,
27
2, 6
HCPL-3101
-
0.3
0.5
μ
s
I
F
= 5 mA
Propagation
Delay Time to
Low Output
Level
t
PHL
HCPL-3100
-
1
2
μ
s
I
F
= 10 mA
HCPL-3101
-
0.3
0.5
μ
s
I
F
= 5 mA
Rise Time
t
r
HCPL-3100
-
0.2
0.5
μ
s
I
F
= 10 mA
I
F
= 5 mA
I
F
= 10 mA
I
F
= 5 mA
I
F
= 10 mA
HCPL-3101
Fall Time
t
f
HCPL-3100
-
0.2
0.5
μ
s
HCPL-3101
Output High
Level Common
Mode Transient
Immunity
|CM
H
|
HCPL-3100
1500
5000
-
V/
μ
s
V
CM
= 600 V
(peak),
V
CC
= 24 V
V
O1
= 24 V
V
02H
=
V
02L
= 2.0 V
10
2
HCPL-3101
I
F
= 5mA
Output Low
Level Common
Mode Transient
Immunity
|CM
L
|
1500
5000
-
V/
μ
s
I
F
= 0 mA
Notes:
1. Derate absolute maximum ratings with ambient temperatures as shown in Figures 11 and 12.
2. A bypass capacitor of 0.01
μ
F or more is needed near the device between V
CC
and GND when measuring output and transfer
characteristics.
3. I
FLH
represents the forward current when the output goes from low to high.
4. Device considered a two terminal device; pins 1-4 are shorted together and pins 5-8 are shorted together.
5. For devices with minimum V
ISO
specified at 5000 V rms, in accordance with UL 1577, each optocoupler is proof-tested by applying an
insulation test voltage
≥
6000 V rms for one second (leakage current detection limit, I
I-O
≤
200
μ
A).
6. The t
PLH
and t
PHL
propagation delays are measured from the 50% level of the input pulse to the 50% level of the output pulse.
7. R
2
limits the Q1 and Q2 peak currents. For more applications and circuit design information see Application Note “Power Transistor
Gate/Base Drive Optocouplers.”
Packaging Characteristics
Input-Output Momentary
Withstand Voltage*
Resistance (Input-Output)
Parameter
Sym.
V
ISO
Min.
5000
Typ.
Max.
Units
V rms
RH = 40% to 60%
t = 1 min, T
A
= 25
°
C
V
I-O
= 500 V, T
A
= 25
°
C
RH = 40% to 60%
f = 1 MHz
Test Conditions
Fig.
Note
4, 5
R
I-O
5x10
10
10
11
–
4
Capacitance (Input-Output)
C
I-O
–
1.2
–
pF
4
*The Input-Output Momentary Withstand Voltage is a dielectric voltage rating that should not be interpreted as an input-output
continuous voltage rating. For the continuous voltage rating refer to the VDE 0884 Insulation Characteristics Table (if applicable), your
equipment level safety specification, or Agilent Application Note 1074, “Optocoupler Input-Output Endurance Voltage.”
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HCPL-3101-000E | 功能描述:高速光耦合器 0.6A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-3101-000E | 制造商:Avago Technologies 功能描述:Optocoupler |
| HCPL-3101-300E | 功能描述:高速光耦合器 0.6A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-3101-500E | 功能描述:高速光耦合器 0.6A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-3120 | 功能描述:邏輯輸出光電耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube |
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