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參數(shù)資料
| 型號(hào)： | HCC4516B |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | RadHardened high voltage complementary MOS logic series |
| 中文描述： | RadHardened高電壓互補(bǔ)MOS邏輯系列 |
| 文件頁(yè)數(shù)： | 4/13頁(yè) |
| 文件大小： | 132K |
| 代理商： | HCC4516B |
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Maximum rating
HCC4000B series
4/13
2
Maximum rating
Stressing the device above the rating listed in the “absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality documents.
Table 1. Absolute maximum ratings
Symbol
Note:
All voltage values are referred to V
SS
pin voltage.
2.1
Recommended operating conditions
Table 2. Recommended operating conditions
Symsbol
Parameter
Value
Unit
V
DD
Supply voltage
-0.5 to 22
V
V
I
DC input voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC input current
±
10
mA
P
D
Power dissipation per package
100
mW
T
OP
Operating temperature
-55 to +125
°C
T
STG
Storage temperature
-65 to +150
°C
Parameter
Value
Unit
V
DD
Supply voltage
20
V
V
I
Input voltage
0 to V
DD
V
T
OP
Operating temperature
-55 to +125
°C
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