參數(shù)資料
型號(hào)： HBT169M
廠商： Electronic Theatre Controls, Inc.
英文描述： THYRISTORS
中文描述： 晶閘管
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 49K
代理商： HBT169M
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HM200105
Issued Date : 2001.10.01
Revised Date : 2001.11.20
Page No. : 2/4
HBT169M
HSMC Product Specification
Thermal Resistances
Symbol
Rth j-lead Thermal resistance junction to lead
Rth j-a
Thermal resistance junction to ambient
Parameter
Conditions
pcb mounted;
lead length=4mm
Min.
-
-
Typ.
-
150
Max.
60
-
Unit
K/W
K/W
Static Characteristics
(Ta=25
°
C)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
I
GT
Gate Trigger Current
V
D
=12V, I
T
=10mA
Gate open circuit
V
D
=12V, I
GT
=0.5mA; R
GK
=1k
V
D
=12V, I
GT
=0.5mA; R
GK
=1k
I
T
=1A
V
D
=12V, I
T
=10mA
Gate open circuit
V
D
= V
DRM(max)
, I
T
=10mA; Tj=125
°
C
Gate open circuit
V
D
=V
DRM(max)
; V
R
= V
RRM(max)
;
Tj=125
°
C; R
GK
=1k
-
50
200
uA
I
L
I
H
V
T
Latching Current
Holding Current
On-state Voltage
-
-
-
2
2
6
5
mA
mA
V
1.2
1.35
-
0.5
0.8
V
V
GT
Gate Trigger Voltage
0.2
0.2
-
V
I
D
,I
R
Off-state Leakage
Current
-
0.05
0.1
mA
Static Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
dV
D
/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
V
DM
=67% V
DRM(max)
; Tj=125
°
C
exponential waveform; R
GK
=1k
I
TM
=2A; V
D
=V
DRM(max)
I
G
=10mA; dI
G
/dt=0.1A/us
V
D
=67% V
DRM(max)
; Tj=125
°
C
I
TM
=1.6A; V
R
=35V; dI
TM
/dt=30A/us
dV
D
/dt=2V/us; R
GK
=1k
500
800
-
V/us
tgt
-
2
-
us
tq
Circuit commutated
turn-off time
-
100
-
us
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