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參數(shù)資料
| 型號： | HBT134I |
| 英文描述： | 4A600V|Triacs |
| 中文描述： | 4A600V |雙向可控硅 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 45K |
| 代理商： | HBT134I |
HI-SINCERITY
MICROELECTRONICS CORP.
HBT131
TRIACS LOGIC LEVEL
Spec. No. : HA200209
Issued Date : 2002.04.01
Revised Date : 2002.04.15
Page No. : 1/4
HBT131
HSMC Product Specification
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for use in
general purpose bidirectional switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.
Quick Reference Data
Symbol
V
DRM
, V
RRM
I
T(RMS)
I
TSM
Parameter
Max.
600
1
16
Unit
V
A
A
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
Pin Configuration
Pin
Description
1
Main Terminal 1
2
Gate
3
Main Terminal 2
1
2
3
Symbol
T2
T1
G
Limtiing Values
Symbol
V
DRM
, V
RRM
I
T(RMS)
Parameter
Min.
-
-
Max.
600
1
Units
V
A
Repetitive peak off-state voltages
RMS on-state current (full sine wave; T
lead
≤
51
°
C)
Non-repetitive peak on-state current
(full sine wave; T
j
=25
°
C prior to surge, t=20ms)
Non-repetitive peak on-state current
(full sine wave; T
j
=25
°
C prior to surge, t=16.7ms)
I
2
t for fusing (t=10ms)
Repetitive rate of rise of on-state current after triggering
(I
TM
=1.5A; I
G
=0.2A; dI
G
/dt=0.2A/us; T2+ G+)
(I
TM
=1.5A; I
G
=0.2A; dI
G
/dt=0.2A/us; T2+ G-)
(I
TM
=1.5A; I
G
=0.2A; dI
G
/dt=0.2A/us; T2- G-)
(I
TM
=1.5A; I
G
=0.2A; dI
G
/dt=0.2A/us; T2- G+)
Peak gate current
Peak gate voltage
Peak gate power
Average gate power (over any 20ms period)
Storage temperature
Operating junction temperature
-
16
A
I
TSM
-
17.6
A
I
2
t
-
1.28
A
2
S
-
50
A/us
-
-
-
-
-
-
-
50
50
10
2
5
5
0.5
150
125
A/us
A/us
A/us
A
V
W
W
°
C
°
C
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
Tstg
Tj
-40
-
TO-92
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