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參數(shù)資料
| 型號： | HBFP0420 |
| 英文描述： | High Performance Isolated Collector Silicon Bipolar Transistor |
| 中文描述： | 高性能隔離采集硅雙極晶體管 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 85K |
| 代理商： | HBFP0420 |
6
HBFP-0420 Die Model and PSPICE Parameters
CMP9
R
CMP7
R
CMP8
R
CMP69
R
R-1 OH
R=.194 OH
R=7.78 OH
R=12 OH
TEMP=
MODEL=DBE
REGION=
AREA=
AREA=3
REGION=
MODEL=BJTMODEL
AREA=
REGION=
MODEL=DCS
TEMP=
AREA=
REGION=
MODEL=DBC
TEMP=
C=7E-3 pF
C=19E-3 pF
XX
E
CMP1
NPNBJTSUBST
CMP5
C
CMP6
C
CMP2
DIODE
CMP16
DIODE
CMP3
DIODE
B
XX
X
C
IS=I.40507E-17
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
RS=
CJO=2.393E-14
TT=
EG=
VJ=0.729
M=0.44
N=1
FC=0.8
CMP10
DIODEMODELFORM
# DIODE MODEL #
MODEL = DBC
IS=IE-24
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
RS=2.17347E2
CJO=8.974E-14
TT=
EG=
VJ=0.6
M=0.42
N=
FC=0.8
CMP12
DIODEMODELFORM
# DIODE MODEL #
MODEL = DCS
IS=IE-24
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
RS=
CJO=2.593E-14
TT=
EG=
VJ=0.8971
M=2.292E-1
N=1.0029
FC=0.8
CMP11
DIODEMODELFORM
# DIODE MODEL #
MODEL = DCE
NPN=yes
PNP=
Forward
BF=1E6
IKE=1.4737E-1
ISE=7.094E-20
NE=1.006
VAF=4.4E1
NF=1
TF=5.3706E-12
XTF=20
VTF=0.8
ITF=2.21805486E-1
PTF=22
XTB=0.7
APPROXOB=yes
Reverse
BR=1
IKR=1.1E-2
ISC=
NC=2
VAR=3.37
NR=1.005
TR=4E-9
Noise
KF=
AF=
KB=
AB=
FB=
Diode and junction
EG=1.17
IS=4.4746E VJC=.6775
IMAX=
XTI=3
TNOM=21
Substrate
S5=
NS=
CJS=
VJS=
MJS=
Parasitics
RB=9.30144818
IRB=3.029562E-6
RBM=.1
RE=
RC=
CJC=2.7056E-14
MJC=0.3319
FC=0.8
CJE=7.474248E
VJE=0.9907
MJE=0.5063
CMP68
BITMODELFORM
# BJT MODEL #
MODEL = BJTMODEL
XC
This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more
precise and accurate design, please refer to the measured data in this data sheet.
The value of beta was high (BF =1E6) to compensate for the fact that diode DBE reduces the current going into the
base (current flows through DBE). The diodes are necessary to model the non-linear effects.
相關(guān)PDF資料 |
PDF描述 |
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| HBFP-0420-BLK | High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR1 | High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR2 | High Performance Isolated Collector Silicon Bipolar Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HBFP-0420 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3V High Performance Transistor |
| HBFP-0420-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 36MA I(C) | SOT-343R |
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