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參數資料
| 型號： | HB56UW264DB-6 |
| 英文描述： | x64 EDO Page Mode DRAM Module |
| 中文描述： | X64的EDO公司頁面模式內存模塊 |
| 文件頁數： | 6/7頁 |
| 文件大?。?/td> | 137K |
| 代理商： | HB56UW264DB-6 |
HB56U232 Series
6
DC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±
5%, V
SS
= 0 V)
HB56U232
60 ns
70 ns
Parameter
Symbol Min
Max Min
Max Unit
Test conditions
Notes
Operating current
I
CC1
I
CC2
—
920
—
840
mA
t
RC
= min
TTL interface
RAS
,
CAS
= V
IH
Dout = High-Z
1, 2
Standby current
—
32
—
32
mA
—
16
—
16
mA
CMOS interface
RAS
,
CAS
≥
V
CC
–
0.2 V
Dout = High-Z
RAS
-only refresh current
I
CC3
I
CC5
—
920
—
840
mA
t
RC
= min
RAS
= V
,
CAS
= V
IL
Dout = enable
2
Standby current
—
80
—
80
mA
1
CAS
-before-
RAS
refresh current
I
CC6
I
CC4
I
LI
I
LO
—
920
—
840
mA
t
RC
= min
t
HPC
= min
0 V
≤
Vin
≤
7.0 V
0 V
≤
Vout
≤
7.0 V
Dout = disable
EDO page mode current
—
1080
—
1000 mA
1, 3
Input leakage current
–
10
10
–
10
10
μ
A
μ
A
Output leakage current
–
10
10
–
10
10
Output high voltage
V
OH
V
OL
2.4
V
CC
0.4
2.4
V
CC
0.4
V
High Iout =
–
2 mA
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected, I
CC
max is specified at the output
open condition.
2. Address can be changed once or less while
RAS
= V
IL
.
3. Address can be changed once or less while
CAS
= V
IH
.
0
0
V
Low Iout = 2 mA
Capacitance
(Ta = 25
°
C, V
CC
= 5 V
±
5%)
Parameter
Symbol
Typ
Max
Unit
Notes
Input capacitance (Address)
Input capacitance (
WE
)
Input capacitance (
RAS
)
Input capacitance (
CAS
)
C
I1
C
I2
C
I3
C
I4
C
I/O
—
95
pF
1
—
127
pF
1
—
43
pF
1
—
43
pF
1
I/O capacitance (DQ0 to 31)
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2.
RAS
and
CAS
= V
IH
to disable Dout.
—
29
pF
1, 2
This Material Copyrighted by Its Respective Manufacturer
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相關代理商/技術參數 |
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| HB56UW264DB-6BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module |
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| HB56UW264DB-7L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module |
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