參數(shù)資料
型號: HB56U464EJ-6B
英文描述: x64 EDO Page Mode DRAM Module
中文描述: X64的EDO公司頁面模式內(nèi)存模塊
文件頁數(shù): 6/7頁
文件大?。?/td> 137K
代理商: HB56U464EJ-6B
HB56U232 Series
6
DC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±
5%, V
SS
= 0 V)
HB56U232
60 ns
70 ns
Parameter
Symbol Min
Max Min
Max Unit
Test conditions
Notes
Operating current
I
CC1
I
CC2
920
840
mA
t
RC
= min
TTL interface
RAS
,
CAS
= V
IH
Dout = High-Z
1, 2
Standby current
32
32
mA
16
16
mA
CMOS interface
RAS
,
CAS
V
CC
0.2 V
Dout = High-Z
RAS
-only refresh current
I
CC3
I
CC5
920
840
mA
t
RC
= min
RAS
= V
,
CAS
= V
IL
Dout = enable
2
Standby current
80
80
mA
1
CAS
-before-
RAS
refresh current
I
CC6
I
CC4
I
LI
I
LO
920
840
mA
t
RC
= min
t
HPC
= min
0 V
Vin
7.0 V
0 V
Vout
7.0 V
Dout = disable
EDO page mode current
1080
1000 mA
1, 3
Input leakage current
10
10
10
10
μ
A
μ
A
Output leakage current
10
10
10
10
Output high voltage
V
OH
V
OL
2.4
V
CC
0.4
2.4
V
CC
0.4
V
High Iout =
2 mA
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected, I
CC
max is specified at the output
open condition.
2. Address can be changed once or less while
RAS
= V
IL
.
3. Address can be changed once or less while
CAS
= V
IH
.
0
0
V
Low Iout = 2 mA
Capacitance
(Ta = 25
°
C, V
CC
= 5 V
±
5%)
Parameter
Symbol
Typ
Max
Unit
Notes
Input capacitance (Address)
Input capacitance (
WE
)
Input capacitance (
RAS
)
Input capacitance (
CAS
)
C
I1
C
I2
C
I3
C
I4
C
I/O
95
pF
1
127
pF
1
43
pF
1
43
pF
1
I/O capacitance (DQ0 to 31)
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2.
RAS
and
CAS
= V
IH
to disable Dout.
29
pF
1, 2
This Material Copyrighted by Its Respective Manufacturer
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