參數(shù)資料
型號: HAT3004R
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel / P Channel Power MOS FET High Speed Power Switching( N/ P 溝道功率 MOSFET)
中文描述: 硅?頻道/ P通道功率MOS FET的高速電源開關(guān)(N / P系列溝道功率MOSFET的)
文件頁數(shù): 8/14頁
文件大?。?/td> 111K
代理商: HAT3004R
HAT3004R
8
Main Characteristics (P channel)
–0.1
–100
–10
–1
–0.1
–0.01
–0.3
–1
–3
–10
–30
–100
–30
–3
–0.3
–0.03
10
μ
s
100
μ
s
Noe5
1ms
–20
–16
–12
–8
–4
0
–2
–4
–6
–8
–10
V = –2.5 V
–10 V
–5 V
–4 V
–3.5 V
–3 V
–20
–16
–12
–8
–4
0
–2
–4
–6
–8
GS
–10
Tc = –25
°
C
75
°
C
25
°
C
–8 V
–6 V
–4.5 V
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Operation in
this area is
limited by R
DS(on)
Ta = 25
°
C
1 shot Pulse
1 Drive Operation
Pulse Test
DCOpeaion(PW<10s
V = –10 V
Pulse Test
–0.5
–0.4
D
–0.3
–0.2
–0.1
0
–2
–4
–6
–8
–10
–0.5 A
I = –2 A
–1 A
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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