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參數(shù)資料
| 型號： | HAT2204C-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Unidirectional ESD protection for transient voltage suppression, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD |
| 中文描述： | 硅?通道場效應晶體管功率開關 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 141K |
| 代理商： | HAT2204C-EL-E |
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 1 of 7
HAT2204C
Silicon N Channel MOS FET
Power Switching
REJ03G0448-0500
Rev.5.00
May 10, 2007
Features
Low on-resistance
R
DS(on)
= 26m
typ.(at V
GS
= 4.5 V)
Low drive current
High density mounting
1.8 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
1
23
654
G
D
S
1
6
5
D
2
D
3
D
4
Index band
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Pch
Note2
Tch
Tstg
Ratings
12
±
8
3.5
14
3.5
900
150
–55 to +150
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse Drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
Note1
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