參數(shù)資料
型號(hào): HAT2052T
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET(N溝道功率MOSFET)
中文描述: 硅?通道功率場(chǎng)效應(yīng)晶體管(不適用溝道功率MOSFET的)
文件頁數(shù): 3/9頁
文件大小: 131K
代理商: HAT2052T
HAT2052T
3
Main Characteristics
0
50
100
150
200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
10
8
6
4
2
0
1
2
3
4
5
10
8
6
4
2
0
1
2
3
4
5
2.0
1.5
1.0
0.5
Ta = 25
°
C
1 shot Pulse
10
μ
s
100
μ
s
1ms
PW=10ms
10V
4 V
V = 1.0 V
1.5 V
Tc = 75
°
C
25
°
C
–25
°
C
C
Ambient Temperature Ta (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
Typical Transfer Characteristics
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Pulse Test
Operation in
this area is
limited by R
DS(on)
V = 10 V
Pulse Test
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
2DieOeain
1DiveOpeaion
Noe5
DCOpeaion(PW<10s
D
D
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參數(shù)描述
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