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參數(shù)資料
| 型號： | HAT2044R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET(N溝道功率MOSFET) |
| 中文描述： | 硅?通道功率場效應(yīng)晶體管（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 126K |
| 代理商： | HAT2044R |
HAT2044R
2
Absolute Maximum Ratings (Ta = 25
°
C)
Note:
1.PW
≤
10
μ
s, duty cycle
≤
1%
When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Electrical Characteristics (Ta = 25
°
C)
Note:
3.Pulse test
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current I
DR
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
Ratings
30
±
12
15
120
15
2.5
150
– 55 to + 150
Unit
V
V
A
A
A
W
°
C
°
C
Pch
Note2
Tch
Tstg
Item
Drain to source breakdown voltage V
(BR)DS
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
S
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
30
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
—
—
0.4
—
—
—
24
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.5
7.0
9.0
40
3420
950
480
48
32
16
45
285
470
360
0.85
45
±
0.1
1
1.4
9.0
9.5
13.0
—
—
—
—
—
—
—
—
—
—
—
1.1
—
μ
A
μ
A
V
m
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
V
GS
=
±
12 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 8 A, V
GS
= 4.5 V
Note3
I
D
= 8 A, V
GS
= 4.0 V
Note3
I
D
= 8 A, V
GS
= 2.5 V
Note3
I
D
= 8 A, V
DS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4 V
I
D
= 15 A
V
GS
= 4 V, I
D
= 8 A
V
DD
@ 10 V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
IF = 15 A, V
GS
= 0
Note3
IF = 15 A, V
GS
= 0
diF/ dt = 20 A/
μ
s
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