參數(shù)資料
型號(hào): HAT2038RJ
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET High Speed Power Switching
中文描述: 硅?通道功率MOS FET的高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 60K
代理商: HAT2038RJ
HAT2038R/HAT2038RJ
4
Main Characteristics
4.0
3.0
2.0
1.0
0
50
100
150
200
100
30
10
3
0.3
1
0.1
0.3
1
3
10
30
100
10
8
6
4
2
0
2
4
6
8
10
10
8
6
4
2
0
1
2
3
4
5
0.03
0.01
0.1
10 μs
PW=10ms(1sho)
Ta = 25 °C
1 shot pulse
100μs
3.5 V
4 V
10 V
3 V
V = 2 V
2.5 V
Tc = 75°C
25°C
–25°C
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
D
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = 10 V
Pulse Test
2DieOeain
1DiveOpeaion
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Noe5
DCOpeaion(PW<10s
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