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參數(shù)資料
| 型號： | HAT2036R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET(N溝道功率MOSFET) |
| 中文描述： | 硅?通道功率場效應(yīng)晶體管（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 33K |
| 代理商： | HAT2036R |
HAT2036R
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
30
V
Gate to source voltage
±
20
V
Drain current
12
A
Drain peak current
96
A
Body-drain diode reverse drain current
12
A
Channel dissipation
2.5
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
30
—
—
V
I
D
= 10mA, V
GS
= 0
V
GS
=
±
20V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10V,
I
D
= 1mA
I
D
= 6A, V
GS
= 10V *
1
I
D
= 6A, V
GS
= 4.5V
*
1
I
D
= 6A, V
DS
= 10V
*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
0.1
μ
A
μ
A
Zero gate voltage drain current
—
—
1
Gate to source cutoff voltage
1.5
—
3.0
V
Static drain to source on state
—
12
15
m
m
resistance
—
20
30
Forward transfer admittance
12
20
—
S
Input capacitance
—
1200
—
pF
Output capacitance
Coss
—
380
—
pF
Reverse transfer capacitance
Crss
—
200
—
pF
Total gate charge
Qg
—
23
—
nc
V
DD
= 10V
V
GS
= 10V
I
D
= 12A
V
GS
= 4.5V, I
D
= 6A
V
DD
≈
10V
Gate to source charge
Qgs
—
4.0
—
nc
Gate to drain charge
Qgd
—
6.0
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
40
—
ns
Rise time
—
300
—
ns
Turn-off delay time
—
35
—
ns
Fall time
—
60
—
ns
Body–drain diode forward voltage
—
0.9
—
V
IF = 12A, V
GS
= 0
*
1
IF = 12A, V
GS
= 0
diF/ dt =20A/
μ
s
Body–drain diode reverse
recovery time
Note:
1. Pulse test
—
35
—
ns
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