參數(shù)資料
型號: HAT2031T
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET(N溝道功率MOSFET)
中文描述: 硅?通道功率場效應(yīng)晶體管(不適用溝道功率MOSFET的)
文件頁數(shù): 4/10頁
文件大小: 129K
代理商: HAT2031T
HAT2031T
4
Main Characteristics
V = 1.5 V
0
50
100
150
200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
20
16
12
8
4
0
2
4
6
8
10
20
16
12
8
4
0
1
2
3
4
5
2.0
1.5
1.0
0.5
Ta = 25 °C
1 shot Pulse
10 μs
100 μs
1ms
PW=10ms
10V
5 V
4 V
3 V
2.5 V
Tc = 75°C
25°C
–25°C
2.0 V
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
2DieOeain
1DiveOpeaion
Noe5
DCOpeaion(PW<10s
this area is
limited by R
DS(on)
Drain to Source Voltage V (V)
Maximum Safe Operation Area
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Operation in
Drain to Source Voltage V (V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V (V)
GS
Typical Transfer Characteristics
V = 10 V
Pulse Test
D
D
D
D
D
D
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