參數(shù)資料
型號: HAT2025R
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET High Speed Power Switching
中文描述: 硅?通道功率MOS FET的高速電源開關(guān)
文件頁數(shù): 5/9頁
文件大小: 51K
代理商: HAT2025R
HAT2025R
5
0.2
Reverse Drain Current I (A)
0.5
1
2
5
10
0.1
500
200
100
20
50
10
5
0
10
20
30
40
50
10000
3000
1000
300
100
30
10
V = 0
f = 1 MHz
50
40
30
20
10
0
4
8
12
16
20
0
50
200
500
100
0.2
0.5
1
2
5
10
0.1
di/dt = 20 A/μs
V = 0, Ta = 25°C
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
20
16
12
8
4
Ciss
Coss
Crss
V
GS
V
DS
I = 8 A
V = 5 V
10 V
25 V
V = 25 V
10 V
5 V
20
10
1000
tf
r
d(off)
t
d(on)
t
V = 4 V, V = 10 V
PW = 3 μs, duty < 1 %
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