參數(shù)資料
型號: HAT2022R
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET High Speed Power Switching
中文描述: 硅?通道功率MOS FET的高速電源開關(guān)
文件頁數(shù): 4/9頁
文件大?。?/td> 50K
代理商: HAT2022R
HAT2022R
4
Gate to Source Voltage V (V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
Case Temperature Tc (°C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
0.05
Pulse Test
F
Drain Current I (A)
Forward Transfer Admittance vs.
Drain Current
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
10
I = 10 A
2 A
5 A
0.1
0.02
0.05
0.01
0.002
0.005
0.5
1
2
5
10
20
50
V = 4 V
10 V
0.04
0.03
0.02
0.01
–40
0
40
80
120
160
0
I = 2 A, 5 A, 10 A
D
2 A, 5 A, 10 A
V = 4 V
10 V
50
20
10
2
5
1
0.5
0.2
0.5
1
2
5
10
20
25 °C
Tc = –25 °C
75 °C
Pulse Test
V = 10 V
Pulse Test
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