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參數(shù)資料
| 型號(hào)： | HAT2016R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 53K |
| 代理商： | HAT2016R |
HAT2016R
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
—
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
V
GS
=
±
16V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10V,
I
D
= 1mA
I
D
= 4A, V
GS
= 10V
Note4
I
D
= 4A, V
GS
= 4V
Note4
I
D
= 4A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.0
V
Static drain to source on state
—
0.03
0.045
resistance
—
0.05
0.08
Forward transfer admittance
5
8
—
S
Input capacitance
—
560
—
pF
Output capacitance
Coss
—
380
—
pF
Reverse transfer capacitance
Crss
—
170
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
30
—
ns
V
GS
= 4V, I
D
= 4A
V
DD
10V
Rise time
—
270
—
ns
Turn-off delay time
—
40
—
ns
Fall time
—
65
—
ns
Body–drain diode forward
voltage
—
0.9
1.4
V
IF = 6.5A, V
GS
= 0
Note4
Body–drain diode reverse
recovery time
Note:
4. Pulse test
t
rr
—
45
—
ns
IF = 6.5A, V
GS
= 0
diF/ dt =20A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2016R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2019R | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2020R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2020R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2022R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
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