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參數(shù)資料
| 型號(hào)： | HAT1111C-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel MOS FET Power Switching |
| 中文描述： | 硅P通道MOS FET的電源開關(guān) |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 153K |
| 代理商： | HAT1111C-EL-E |
HAT1111C
Rev.6.00 May 19, 2005 page 4 of 6
1000
800
600
400
200
25
0
25
50
75
100 125
150
0
-0.3
-0.1
-3
-30
-100
100
30
10
3
1
0.3
0.1
-1
-10
Case Temperature Tc (°C)
Static Drain to Source On State Resistance
vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
F
25
°
C
Tc =
25
°
C
75
°
C
V
= -10 V
Pulse Test
V
GS
= -10V
Pulse Test
-0.5,-1 A
0
-20
-40
-60
3000
1000
10000
100
300
0
0
0
-20
-4
-40
-8
-60
-12
2
Gate Charge Qg (nC)
4
6
8
10
-16
1000
100
1
10
-0.01 -0.03
-0.1
-0.3
-1
-3
-10
30
10
3
1
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= -2 A
V
DD
V
GS
C
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
D
D
G
G
Dynamic Input Characteristics
Drain Current I
D
(A)
S
Switching Characteristics
V
DD
= -50 V
-25 V
-10 V
td(on)
td(off)
tr
tf
V
DD
= -10 V
-25 V
-50 V
-2 A
-10
-30
-50
0
-0.4
-0.8
-1.2
-1.6
-2.0
-10
-4
V
GS
= 0 , 10 V
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
R
D
Pulse Test
-2
-6
-8
-2 A
I
D
= -0.5,-1 A
-4.5V
-10 V
-80
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相關(guān)代理商/技術(shù)參數(shù) |
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| HAT1126R | 制造商:Renesas Electronics Corporation 功能描述: |
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| HAT1127H | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET Power Switching |
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