參數(shù)資料
型號(hào): HAT1055R
廠商: Renesas Technology Corp.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速電源開關(guān)
文件頁數(shù): 6/10頁
文件大小: 119K
代理商: HAT1055R
HAT1055R, HAT1055RJ
Rev.1.00, Aug.29.2003, page 6 of 9
C
Drain Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain Source Voltage
Drain Current I
D
(A)
S
Switching Characteristics
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
0
–10
–20
–30
–40
–50
2000
5000
1000
100
200
500
10
20
50
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
0
–20
–40
–60
–80
–1000
0
–4
–8
–12
–16
8
16
24
32
40
–20
1000
300
30
100
3
10
1
–0.1 –0.3
–1
–3
–10
–30
–100
V
GS
= –10 V, V
DS
= –30 V
PW = 5
μ
s, duty < 1 %
tf
r
d(on)
t
d(off)
t
V
DD
= –10 V
–25 V
–50 V
I
D
= –5 A
V
DS
V
GS
V
DD
= –10 V
–25 V
–50 V
Reverse Drain Current I
DR
(A)
R
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.3
–1
–3
–10
–30
–100
1000
500
50
100
20
10
200
di / dt = 100 A /
μ
s
V
GS
= 0, Ta = 25
°
C
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